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NE85618-A

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NE85618-A

RF TRANS NPN 12V 6.5GHZ SOT343

Manufacturer: CEL

Categories: Bipolar RF Transistors

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CEL NE85618-A is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a transition frequency of 6.5GHz and a maximum collector current of 100mA. It provides a typical gain of 13dB and a low noise figure of 1.1dB at 1GHz. The transistor type is NPN, with a collector-emitter breakdown voltage of 12V. Power dissipation is rated at 150mW, and it features a minimum DC current gain (hFE) of 50 at 20mA and 10V. The NE85618-A is supplied in a SOT-343 (SC-82A) surface mount package. Operating temperature range extends up to 150°C (TJ). This device is utilized in various wireless communication systems and RF front-end circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain13dB
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Frequency - Transition6.5GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Supplier Device PackageSOT-343

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