NE851M13-T3-A
TRANS NPN LOW PRO M13 SMDManufacturer: CEL
Categories: Bipolar RF Transistors
Quality Control: Learn More
CEL NE851M13-T3-A is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 5.5V and a maximum collector current of 100mA. It exhibits a transition frequency of 4.5GHz, with a typical gain ranging from 4dB to 5.5dB at 2GHz. The noise figure is specified between 1.9dB and 2.5dB at 2GHz. With a maximum power dissipation of 140mW, it is packaged in an M13 (SOT-3) surface mount package supplied on cut tape. This transistor finds application in wireless communication systems and other RF front-end circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Gain | 4dB ~ 5.5dB @ 2GHZ |
| Power - Max | 140mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 5.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 1V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.9dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | M13 |
Request a Quote
Clients Also Buy
NE68133-A
RF TRANS NPN 10V 9GHZ SOT23
NE68719-T1
RF TRANS NPN 3V 11GHZ 3SMINMOLD
NE461M02-T1-QS-AZ
RF TRANS NPN 15V SOT89
