NE851M03-A
RF TRANS NPN 5.5V 4.5GHZ SOT363Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE851M03-A is an NPN bipolar RF transistor designed for high-frequency applications. This device offers a 4.5GHz transition frequency and a maximum collector current of 100mA. It features a typical noise figure of 1.9dB to 2.5dB at 2GHz and a minimum DC current gain (hFE) of 100 at 5mA collector current and 1V collector-emitter voltage. The transistor is rated for a maximum collector-emitter breakdown voltage of 5.5V and a maximum power dissipation of 200mW. The NE851M03-A is supplied in a SOT-363 surface mount package, suitable for automated assembly. Its performance characteristics make it relevant for use in wireless infrastructure, satellite communications, and other demanding RF systems. Operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 5.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 1V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.9dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | SOT-363 |
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