NE68819-T1-A
NPN SILICON AMPLIFIER AND OSCILLManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68819-T1-A is an NPN bipolar RF transistor designed for high-frequency amplification and oscillation applications. This surface-mount device, packaged in an SC-75 (SOT-416) case, offers a transition frequency of 9GHz and a maximum collector current of 100mA. Key performance characteristics include a minimum DC current gain (hFE) of 80 at 3mA/1V, a typical noise figure of 1.7dB at 2GHz, and a gain of 8dB. The transistor is rated for a maximum power dissipation of 125mW and a collector-emitter breakdown voltage of 6V, with an operating junction temperature of 150°C. It is supplied on tape and reel. This component is widely utilized in wireless communication infrastructure, satellite systems, and other RF front-end modules.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 8dB |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 3mA, 1V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.7dB @ 2GHz |
| Supplier Device Package | SC-75 (USM) |
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