NE68819-T1
RF TRANS NPN 6V 5GHZ 3SMINIMOLDManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE68819-T1 is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 6V and capable of handling a collector current of up to 100mA, this device offers a transition frequency of 5GHz. With a maximum power dissipation of 125mW, it is suitable for demanding RF circuits. The typical noise figure ranges from 1.7dB to 2.5dB at 2GHz, ensuring efficient signal amplification. This transistor is provided in a 3-SuperMiniMold package, specifically the SOT-523, for surface mounting. The minimum DC current gain (hFE) is 80 at 3mA and 1V. Operating temperature reaches up to 150°C (TJ). This component is commonly utilized in wireless communications infrastructure, radar systems, and satellite equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 3mA, 1V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 1.7dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | 3-SuperMiniMold (19) |
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