NE68819-A
RF TRANS NPN 6V 5GHZ 3SMINIMOLDManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68819-A is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 6V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 5GHz, it is optimized for RF signal amplification and switching. The transistor exhibits a minimum DC current gain (hFE) of 80 at 3mA, 1V. A typical noise figure ranges from 1.7dB to 2.5dB at 2GHz. The NE68819-A is housed in a compact 3-SuperMiniMold package, equivalent to SOT-523, suitable for surface mounting. It has a maximum power dissipation of 125mW and operates at an ambient temperature of up to 150°C (TJ). This device finds application in wireless communication systems and other high-frequency electronic designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 3mA, 1V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 1.7dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | 3-SuperMiniMold (19) |
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