NE687M33-T3-A
RF TRANS NPN 3V 12GHZ 3SMINMOLDManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL's NE687M33-T3-A is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 3V and a maximum collector current of 30mA. It features a transition frequency of 12GHz and a maximum power dissipation of 90mW. The NE687M33-T3-A exhibits a typical noise figure of 1.5dB to 2dB at 2GHz and a minimum DC current gain (hFE) of 70 at 10mA and 1V. Supplied in a 3-SuperMiniMold (M33) surface mount package, this transistor is suitable for demanding RF circuitry in industries such as telecommunications and wireless infrastructure. The part is provided on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 90mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 1V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2dB @ 2GHz |
| Supplier Device Package | 3-SuperMiniMold (M33) |
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