NE687M33-A
RF TRANS NPN 3V 12GHZ 3SMINMOLDManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE687M33-A is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 3V collector-emitter breakdown voltage and a maximum collector current of 30mA, with a typical DC current gain (hFE) of 70 at 10mA and 1V. Operating up to 12GHz, it offers a power dissipation of 90mW. The noise figure is typically 1.5dB to 2dB at 2GHz. The NE687M33-A utilizes a 3-SuperMiniMold (M33) surface mount package, suitable for demanding environments with an operating temperature up to 150°C. It finds application in wireless communication systems and other high-frequency signal amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 90mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 1V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2dB @ 2GHz |
| Supplier Device Package | 3-SuperMiniMold (M33) |
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