NE68719-T1
RF TRANS NPN 3V 11GHZ 3SMINMOLDManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68719-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 3V and a maximum collector current of 30mA. It features a transition frequency of 11GHz, making it suitable for demanding wireless communication systems. The transistor exhibits a minimum DC current gain (hFE) of 70 at 20mA and 2V. With a typical noise figure of 1.3dB to 2dB at 2GHz and a maximum power dissipation of 90mW, it is engineered for efficient performance. The NE68719-T1 is housed in a 3-SuperMiniMold package (SOT-523) and is supplied on a tape and reel. This device is commonly utilized in cellular infrastructure, wireless local area networks (WLAN), and other broadband communication equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 90mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 20mA, 2V |
| Frequency - Transition | 11GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2dB @ 2GHz |
| Supplier Device Package | 3-SuperMiniMold (19) |
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