NE685M13-A
RF TRANS NPN 6V 12GHZ M13Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, Part Number NE685M13-A, is a surface mount bipolar transistor designed for high-frequency applications. This device operates with a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA. It features a transition frequency of 12GHz and a maximum power dissipation of 140mW. The NE685M13-A exhibits a typical DC current gain (hFE) of 75 at 10mA and 3V, with a noise figure ranging from 1.5dB to 2.5dB at 2GHz. The operating junction temperature can reach 150°C. This component is supplied in a SOT-3 package, designated as M13 by the supplier. It finds application in wireless communications and other high-frequency circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 140mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | M13 |
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