NE685M03-T1-A
RF TRANS NPN 5V 12GHZ M03Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, Part Number NE685M03-T1-A, is engineered for high-frequency applications. This device features a 5V collector-emitter breakdown voltage and a maximum collector current of 30mA, with a power dissipation capability of 125mW. Its transition frequency reaches 12GHz, making it suitable for demanding RF designs. The NE685M03-T1-A exhibits a typical noise figure ranging from 1.5dB to 2.5dB at 2GHz, with a minimum DC current gain (hFE) of 75 at 10mA and 3V. Packaged in a SOT-623F (M03) surface mount configuration and supplied on tape and reel, this transistor operates efficiently up to a junction temperature of 150°C. It finds application in wireless communications infrastructure, satellite systems, and radar technology.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-623F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | M03 |
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