NE685M03-A
RF TRANS NPN 5V 12GHZ M03Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE685M03-A is a high-performance NPN bipolar RF transistor designed for demanding wireless applications. This surface mount component, packaged in an SOT-623F (M03), offers a transition frequency of 12GHz and a maximum collector current of 30mA. It features a low noise figure, typically ranging from 1.5dB to 2.5dB at 2GHz, making it suitable for low-noise amplifier (LNA) designs. With a maximum power dissipation of 125mW and a collector-emitter breakdown voltage of 5V, this transistor exhibits a minimum DC current gain (hFE) of 75 at 10mA and 3V. The NE685M03-A is commonly utilized in mobile communications, satellite systems, and other high-frequency signal amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-623F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | M03 |
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