NE68530-T1-A
RF TRANS NPN 6V 12GHZ SOT323Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE68530-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This device features a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA, with a power dissipation of 150mW. It offers a transition frequency of 12GHz and a typical gain of 7dB. The noise figure ranges from 1.5dB to 2.5dB at 2GHz. With a minimum DC current gain (hFE) of 75 at 10mA and 3V, this transistor is suitable for use in wireless communication systems and other demanding RF circuitry. It is supplied in a compact SOT-323 surface mount package, available on tape and reel. The operating junction temperature can reach up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 7dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | SOT-323 |
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