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NE68530-T1

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NE68530-T1

RF TRANS NPN 6V 12GHZ SOT323

Manufacturer: CEL

Categories: Bipolar RF Transistors

Quality Control: Learn More

CEL NE68530-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, packaged in an SOT-323 (SC-70) case, offers a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA. The component exhibits a minimum DC current gain (hFE) of 75 at 10mA and 3V, and a typical gain of 7dB. With a transition frequency of 12GHz, the NE68530-T1 is suitable for operation in the 2GHz range, where it provides a nominal noise figure between 1.5dB and 2.5dB. Its maximum power dissipation is 150mW, and it can operate at junction temperatures up to 150°C. This device is commonly found in wireless communications and RF front-end circuitry. The NE68530-T1 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain7dB
Power - Max150mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)6V
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 10mA, 3V
Frequency - Transition12GHz
Noise Figure (dB Typ @ f)1.5dB ~ 2.5dB @ 2GHz
Supplier Device PackageSOT-323

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