NE68519-T1-A
SAME AS 2SC5010 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68519-T1-A is an NPN silicon RF transistor designed for high-frequency amplification. This component offers a collector current (Ic) of up to 30mA and a collector-emitter breakdown voltage of 6V. With a transition frequency (fT) of 12GHz, it is suitable for demanding RF applications. The device exhibits a minimum DC current gain (hFE) of 75 at 10mA and 3V, and a typical noise figure of 1.5dB at 2GHz, with a power gain of 8.5dB. Operating at a maximum junction temperature of 150°C, the NE68519-T1-A is packaged in an SC-75 (USM) surface-mount case, supplied on tape and reel. This transistor is commonly utilized in wireless communication systems and other RF front-end circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 8.5dB |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB @ 2GHz |
| Supplier Device Package | SC-75 (USM) |
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