NE68519-T1
RF TRANS NPN 6V 12GHZ SOT523Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68519-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in a SOT-523, operates with a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA. It exhibits a transition frequency of 12GHz and a typical gain of 7.5dB. The transistor features a low noise figure, ranging from 1.5dB to 2.5dB at 2GHz, and a minimum DC current gain (hFE) of 75 at 10mA and 3V. With a maximum power dissipation of 125mW, the NE68519-T1 is suitable for use in wireless communications infrastructure, satellite communications, and radar systems. It is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 7.5dB |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.5dB @ 2GHz |
| Supplier Device Package | SOT-523 |
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