NE68519-A
RF TRANS NPN 6V 12GHZ SOT523Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, part number NE68519-A, is a high-performance bipolar transistor designed for demanding RF applications. This SOT-523 packaged device operates with a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA. It features a transition frequency of 12GHz, enabling operation in high-frequency circuits. With a typical gain of 11dB and a low noise figure of 1.5dB at 2GHz, the NE68519-A is well-suited for amplifier and mixer stages. The device offers a minimum DC current gain (hFE) of 75 at 10mA and 3V, and a maximum power dissipation of 125mW. Its surface mount capability and operation up to 150°C (TJ) make it a robust choice for wireless communication systems, radar, and satellite communications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11dB |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.5dB @ 2GHz |
| Supplier Device Package | SOT-523 |
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