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NE68518-T1-A

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NE68518-T1-A

RF TRANS NPN 6V 12GHZ SOT343

Manufacturer: CEL

Categories: Bipolar RF Transistors

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CEL NE68518-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a 6V collector-emitter breakdown voltage and a maximum collector current of 30mA. With a transition frequency of 12GHz and a typical gain of 11dB, it is suitable for demanding RF circuits. The noise figure is rated at 1.5dB typically at 2GHz. The device features a minimum DC current gain (hFE) of 75 at 10mA and 3V. Packaged in a SOT-343 (SC-82A) surface mount configuration, it is supplied on tape and reel for automated assembly. The NE68518-T1-A has a maximum power dissipation of 150mW and an operating junction temperature of up to 150°C. This transistor finds utility in various wireless communication systems and RF front-end modules.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain11dB
Power - Max150mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)6V
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 10mA, 3V
Frequency - Transition12GHz
Noise Figure (dB Typ @ f)1.5dB @ 2GHz
Supplier Device PackageSOT-343

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