NE681M13-A
RF TRANS NPN 10V 7GHZ M13Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE681M13-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in an SOT-3 (M13) configuration, offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. It exhibits a transition frequency of 7GHz and a typical noise figure ranging from 1.4dB to 2.7dB at 1GHz. With a maximum power dissipation of 140mW and an operating junction temperature of 150°C, the NE681M13-A is suitable for use in wireless communication systems and RF front-end circuitry. The minimum DC current gain (hFE) is specified as 80 at 7mA collector current and 3V Vce.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 140mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2.7dB @ 1GHz |
| Supplier Device Package | M13 |
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