NE681M03-T1-A
RF TRANS NPN 10V 7GHZ M03Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, part number NE681M03-T1-A, offers robust performance for high-frequency applications. This component features a 10V collector-emitter breakdown voltage and a maximum collector current of 65mA. With a transition frequency of 7GHz and a power dissipation of 125mW, it is well-suited for RF amplification and switching in wireless communication systems, radar, and test and measurement equipment. The device exhibits a typical DC current gain (hFE) of 80 at 7mA and 3V. Noise figure performance ranges from 1.4dB to 2.7dB at 1GHz. Packaged in a surface mount SOT-623F (M03) and supplied on tape and reel, the NE681M03-T1-A is designed for efficient assembly and operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-623F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2.7dB @ 1GHz |
| Supplier Device Package | M03 |
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