NE68139R-T1-A
RF TRANS NPN 10V 9GHZ SOT143RManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL's NE68139R-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, housed in a SOT-143R package, offers a collector current of up to 65mA and a collector-emitter breakdown voltage of 10V. The transistor boasts a transition frequency of 9GHz and provides a typical gain of 13.5dB, with a minimum DC current gain (hFE) of 50 at 7mA and 3V. Engineered for low noise, it exhibits a typical noise figure of 1.2dB to 2dB at 1GHz. With a maximum power dissipation of 200mW and an operating junction temperature of 150°C, this component is suitable for use in wireless communication systems and other demanding RF circuits. The NE68139R-T1-A is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-143R |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 7mA, 3V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 2dB @ 1GHz |
| Supplier Device Package | SOT-143R |
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