NE68139R-T1
RF TRANS NPN 10V 9GHZ SOT143RManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE68139R-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This SOT-143R surface-mount component offers a 9GHz transition frequency and a maximum collector current of 65mA. It features a power dissipation of 200mW and a collector-emitter breakdown voltage of 10V. With a typical gain of 13.5dB and a noise figure ranging from 1.2dB to 2dB at 1GHz, this transistor is suitable for demanding RF circuitry. The minimum DC current gain (hFE) is 50 at 7mA and 3V. Operating temperature range extends up to 150°C (TJ). This component is supplied in a Tape & Reel (TR) package. It finds application in wireless communication systems and other RF front-end designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-143R |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 7mA, 3V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 2dB @ 1GHz |
| Supplier Device Package | SOT-143R |
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