NE68139-T1-A
SAME AS 2SC4094 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68139-T1-A is an NPN bipolar RF transistor offering high-frequency performance with a transition frequency of 9GHz. This surface mount component, packaged in a SOT-143 (TO-253-4, TO-253AA) configuration, operates with a maximum collector current of 65mA and a collector-emitter breakdown voltage of 10V. It provides a typical gain of 15dB and a low noise figure of 1.2dB at 1GHz. The NE68139-T1-A is suitable for applications requiring efficient amplification in wireless communication systems and other high-frequency RF circuits. It is supplied on tape and reel for automated assembly. The device is rated for operation up to 150°C junction temperature.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 15dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-143 |
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