NE68139-T1
RF TRANS NPN 10V 9GHZ SOT143RManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68139-T1 is a high-performance NPN bipolar RF transistor designed for demanding wireless applications. This component offers a transition frequency of 9GHz and a maximum collector current of 65mA, with a collector-emitter breakdown voltage of 10V. It delivers a typical gain of 13.5dB and features a low noise figure, typically ranging from 1.2dB to 2dB at 1GHz. The NE68139-T1 is supplied in a compact SOT-143 surface mount package, facilitating efficient board layout. With a maximum power dissipation of 200mW and an operating junction temperature of 150°C, it is suitable for use in telecommunications, satellite communications, and other high-frequency signal processing systems. The device is provided in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 7mA, 3V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 2dB @ 1GHz |
| Supplier Device Package | SOT-143 |
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