NE68139-A
RF TRANS NPN 10V 9GHZ SOT143Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68139-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in SOT-143 (TO-253-4), offers a 9GHz transition frequency and a maximum collector current of 65mA. It features a collector-emitter breakdown voltage of 10V and a maximum power dissipation of 200mW. Typical performance includes a DC current gain (hFE) of 50 at 20mA and 8V, and a noise figure of 1.2dB at 1GHz, with a gain of 13.5dB. The device operates at temperatures up to 150°C (TJ). This transistor is suitable for use in wireless communications and other RF front-end circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-143 |
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