NE68133-T1B-R35-A
RF TRANS NPN 10V 9GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68133-T1B-R35-A is an NPN bipolar RF transistor designed for high-frequency applications. This SOT-23-3 packaged device offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. It features a transition frequency of 9GHz and provides a typical gain of 13dB. The NE68133-T1B-R35-A exhibits a minimum DC current gain (hFE) of 125 at 20mA and 8V, with a low noise figure of 1.2dB at 1GHz. Its maximum power dissipation is 200mW, and it operates at junction temperatures up to 150°C. This component is commonly utilized in wireless communications infrastructure, satellite technology, and radar systems. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 20mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-23-3 |
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