NE68130-T1-R34-A
RF TRANS NPN 10V 7GHZ SOT323Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE68130-T1-R34-A is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. With a transition frequency of 7GHz and a typical gain of 9dB, it is suitable for RF amplification circuits. The noise figure is rated at a typical 1.4dB at 1GHz. This device features a surface mountable SOT-323 (SC-70) package, delivering 150mW maximum power dissipation. The minimum DC current gain (hFE) is 40 at 7mA and 3V. Operating temperature range extends up to 150°C (TJ). This transistor is commonly utilized in wireless communication systems and RF front-end modules. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 7mA, 3V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB @ 1GHz |
| Supplier Device Package | SOT-323 |
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