NE68130-T1
RF TRANS NPN 10V 7GHZ SOT323Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE68130-T1 is an NPN bipolar RF transistor designed for high-frequency applications. Exhibiting a collector current of up to 65mA, this component is specified for operation up to 7GHz with a collector-emitter breakdown voltage of 10V. The device offers a minimum DC current gain (hFE) of 40 at 7mA and 3V. Gain figures range from 9dB to 13.5dB, with typical noise figures of 1.5dB to 1.6dB at 1GHz to 2GHz. It is supplied in a SOT-323 package, suitable for surface mounting. Maximum power dissipation is rated at 150mW, and the operating junction temperature can reach 150°C. This transistor finds use in mobile communications and wireless infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB ~ 13.5dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 7mA, 3V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 1.6dB @ 1GHz ~ 2GHz |
| Supplier Device Package | SOT-323 |
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