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NE68130-A

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NE68130-A

RF TRANS NPN 10V 7GHZ SOT323

Manufacturer: CEL

Categories: Bipolar RF Transistors

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CEL NE68130-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in an SOT-323 package, offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. With a transition frequency of 7GHz and a typical gain of 9dB at 1GHz, it is suitable for demanding RF circuitry. The NE68130-A exhibits a low noise figure of 1.4dB at 1GHz, making it valuable in sensitive amplification stages. Its maximum power dissipation is 150mW, and it can operate at junction temperatures up to 150°C. This device finds utility in wireless communication systems and other high-frequency signal processing applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain9dB
Power - Max150mW
Current - Collector (Ic) (Max)65mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 7mA, 3V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.4dB @ 1GHz
Supplier Device PackageSOT-323

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