NE68119-T1-A
SAME AS 2SC5007 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68119-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in an SC-75 (USM) SOT-416, offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. It features a transition frequency of 7GHz and a typical gain of 12dB, with a noise figure of 1.4dB at 1GHz. The device operates at a maximum power dissipation of 125mW and can withstand junction temperatures up to 150°C. Its DC current gain (hFE) is a minimum of 80 at an operating point of 7mA and 3V. The NE68119-T1-A is commonly utilized in wireless communication systems and other demanding RF circuitry. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB @ 1GHz |
| Supplier Device Package | SC-75 (USM) |
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