NE68119-T1
RF TRANS NPN 10V 7GHZ 3SMINMOLDManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, NE68119-T1. This surface mount device operates at 7GHz with a collector-emitter breakdown voltage of 10V. It features a maximum collector current of 65mA and a maximum power dissipation of 100mW. The transistor exhibits a minimum DC current gain (hFE) of 80 at 7mA and 3V. Noise figure is specified between 1.4dB and 1.8dB at frequencies from 1GHz to 2GHz, with a typical gain range of 10dB to 14dB. The component is housed in a 3-SuperMiniMold package, SOT-523, supplied on tape and reel. This NPN RF transistor is suitable for applications in wireless communications and satellite navigation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10dB ~ 14dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz |
| Supplier Device Package | 3-SuperMiniMold (19) |
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