NE68118-T1-A
RF TRANS NPN 10V 9GHZ SOT343Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE68118-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. It features a transition frequency of 9GHz and a typical gain of 14dB. The noise figure is rated at 1.2dB at 1GHz, making it suitable for low-noise amplification stages. With a maximum power dissipation of 150mW and a high junction temperature rating of 150°C, it is engineered for demanding operational environments. The device is supplied in a SOT-343 (SC-82A) surface mount package and is available on tape and reel for automated assembly. This transistor finds application in various wireless communication systems and RF front-end modules.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 14dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-343 |
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