NE68118-A
RF TRANS NPN 10V 9GHZ SOT343Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68118-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a SOT-343 package (SC-82A), offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. With a transition frequency of 9GHz and a typical gain of 14dB, the NE68118-A exhibits a minimum DC current gain (hFE) of 50 at 20mA and 8V. Its low noise figure, rated at 1.2dB at 1GHz, makes it suitable for sensitive RF amplification stages. The device can dissipate up to 150mW and operates at junction temperatures up to 150°C. This component is commonly utilized in wireless communication systems and other RF front-end circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 14dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Supplier Device Package | SOT-343 |
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