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NE68039R-T1

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NE68039R-T1

RF TRANS NPN 10V 10GHZ SOT143R

Manufacturer: CEL

Categories: Bipolar RF Transistors

Quality Control: Learn More

The CEL NE68039R-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This device offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA, with a power dissipation rating of 200mW. It features a transition frequency of 10GHz, making it suitable for use in wireless communication systems, satellite receivers, and other high-speed electronic circuits. The NE68039R-T1 exhibits a typical gain ranging from 6.5dB to 11dB, with a noise figure between 1.7dB and 2.6dB across the 2GHz to 4GHz frequency range. Supplied in a SOT-143R surface mount package, this component is optimized for automated assembly and operates efficiently up to 150°C junction temperature. The device is provided in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-143R
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain6.5dB ~ 11dB
Power - Max200mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 6V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
Supplier Device PackageSOT-143R

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