NE68039-T1-A
RF TRANS NPN 10V 10GHZ SOT143Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68039-T1-A is an NPN bipolar RF transistor engineered for high-frequency applications. Featuring a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA, this transistor exhibits a transition frequency of 10GHz. The device offers a typical gain of 11dB and a noise figure of 1.8dB at 2GHz, with a minimum DC current gain (hFE) of 50 at 10mA and 6V. Dissipating a maximum power of 200mW, it is housed in a SOT-143 surface mount package (TO-253-4, TO-253AA). Operating at junction temperatures up to 150°C, the NE68039-T1-A is supplied on tape and reel. This component is suitable for use in wireless communication systems and RF amplifier circuits across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT-143 |
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