NE68039-A
RF TRANS NPN 10V 10GHZ SOT143Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68039-A NPN RF Transistor, operating at 10GHz with a 10V collector-emitter breakdown voltage. This surface mount device, packaged in SOT-143 (TO-253-4), delivers 200mW maximum power dissipation and a 35mA collector current. Key performance characteristics include a minimum DC current gain (hFE) of 50 at 10mA and 6V, a typical gain of 11dB, and a low noise figure of 1.8dB at 2GHz. The NE68039-A is designed for high-frequency applications and operates up to 150°C. Its specifications make it suitable for use in wireless communication systems and other RF front-end circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT-143 |
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