NE68033-T1B-R45-A
RF TRANS NPN 10V 10GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
Quality Control: Learn More
CEL NE68033-T1B-R45-A is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. It features a transition frequency of 10GHz and a typical gain of 9dB at 2GHz, with a noise figure of 1.8dB at the same frequency. The transistor is rated for a maximum power dissipation of 200mW and operates at junction temperatures up to 150°C. Supplied in a SOT-23-3 surface mount package, it is delivered on tape and reel. This device is commonly utilized in wireless communication systems, including mobile infrastructure and point-to-point radio links.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT-23-3 |
Request a Quote
Clients Also Buy
NE85633-R24-A
RF TRANS NPN 12V 7GHZ SOT23
NE68130-T1-A
RF TRANS NPN 10V 7GHZ SOT323
NE68519-A
RF TRANS NPN 6V 12GHZ SOT523
