NE68033-T1B-R44-A
RF TRANS NPN 10V 10GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE68033-T1B-R44-A is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. With a transition frequency of 10GHz and a typical gain of 9dB, it is suitable for demanding RF circuits. The noise figure is rated at 1.8dB at 2GHz, ensuring low-noise performance. The transistor operates at a maximum power dissipation of 200mW and can withstand junction temperatures up to 150°C. It is supplied in a SOT-23-3 surface mount package and delivered on tape and reel. This component finds application in wireless communication systems and other high-frequency electronic designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT-23-3 |
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