NE68033-T1B-A
SAME AS 2SC3585 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE68033-T1B-A is an NPN silicon RF transistor designed for high-frequency applications. This component features a collector current of up to 35mA and a collector-emitter breakdown voltage of 10V. With a transition frequency of 10GHz and a typical gain of 8dB, it is well-suited for amplification tasks. The noise figure is rated at 1.8dB at 2GHz, ensuring signal integrity. This SOT-23-3 surface mount device operates at a maximum power of 200mW and can handle junction temperatures up to 150°C. Commonly found in wireless communications and test and measurement equipment, the NE68033-T1B-A is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 8dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT-23-3 |
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