NE68033-A
RF TRANS NPN 10V 10GHZ SOT23Manufacturer: CEL
Categories: Bipolar RF Transistors
Quality Control: Learn More
CEL NE68033-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, housed in a SOT-23-3 package, offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. Key specifications include a transition frequency of 10GHz, a typical gain of 9dB, and a noise figure of 1.8dB at 2GHz. With a maximum power dissipation of 200mW and an operating temperature up to 150°C, the NE68033-A is suitable for use in demanding communication systems and wireless infrastructure. The DC current gain (hFE) is rated at a minimum of 50 at 10mA and 6V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT-23-3 |
Request a Quote
Clients Also Buy
NE68133-A
RF TRANS NPN 10V 9GHZ SOT23
NE68719-T1
RF TRANS NPN 3V 11GHZ 3SMINMOLD
NE851M13-T3-A
TRANS NPN LOW PRO M13 SMD
