NE68030-T1-A
SAME AS 2SC4228 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL's NE68030-T1-A is an NPN silicon RF transistor optimized for high-frequency amplification. This surface mount device, packaged in an SOT-323 (SC-70) case, operates with a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. It features a transition frequency of 8GHz and a typical gain of 7.5dB. The NE68030-T1-A exhibits a low noise figure of 1.9dB at 2GHz and a minimum DC current gain (hFE) of 50 at 5mA, 3V. With a maximum power dissipation of 150mW and an operating junction temperature of 150°C, this component is suitable for applications in wireless communication systems and other RF front-end circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 7.5dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 3V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.9dB @ 2GHz |
| Supplier Device Package | SOT-323 |
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