Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

NE68030-T1

Banner
productimage

NE68030-T1

RF TRANS NPN 10V 10GHZ SOT323

Manufacturer: CEL

Categories: Bipolar RF Transistors

Quality Control: Learn More

The CEL NE68030-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, housed in an SOT-323 package, offers a collector current capability of up to 35mA and a collector-emitter breakdown voltage of 10V. With a transition frequency of 10GHz and a maximum power dissipation of 150mW, it is suitable for demanding RF circuits. Typical DC current gain (hFE) is 50 at 10mA and 6V. Gain ranges from 5.3dB to 12.5dB, with a noise figure typically between 1.5dB and 2.9dB across the 1GHz to 4GHz frequency range. The NE68030-T1 is commonly utilized in wireless communication systems, including mobile devices and base stations. This component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain5.3dB ~ 12.5dB
Power - Max150mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 6V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.5dB ~ 2.9dB @ 1GHz ~ 4GHz
Supplier Device PackageSOT-323

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
NE85633-R24-A

RF TRANS NPN 12V 7GHZ SOT23

product image
NE68130-T1-A

RF TRANS NPN 10V 7GHZ SOT323

product image
NE67818-A

RF TRANS NPN 6V 12GHZ SOT343