NE68019-T1-A
RF TRANS NPN 10V 10GHZ SOT523Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68019-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a SOT-523 package, operates with a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. It features a transition frequency of 10GHz and a maximum power dissipation of 100mW. The device offers a typical gain of 9.6dB and a noise figure of 1.9dB at 2GHz. With a minimum DC current gain of 80 at 5mA and 3V, the NE68019-T1-A is suitable for use in telecommunications, wireless infrastructure, and satellite communications systems. The component is supplied on tape and reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9.6dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 3V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.9dB @ 2GHz |
| Supplier Device Package | SOT-523 |
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