NE68019-T1
RF TRANS NPN 10V 10GHZ SOT523Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE68019-T1 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. With a guaranteed transition frequency of 10GHz and a maximum power dissipation of 100mW, it is suitable for demanding RF designs. The NE68019-T1 offers a typical gain range of 9.6dB to 13.5dB and a low noise figure, typically ranging from 1.7dB to 1.9dB across the 1GHz to 2GHz frequency band. It is presented in a compact SOT-523 surface mount package and supplied on tape and reel. This transistor is commonly utilized in wireless communication systems, satellite broadcasting, and advanced radar applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9.6dB ~ 13.5dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 3V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz |
| Supplier Device Package | SOT-523 |
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