NE68018-T1-A
RF TRANS NPN 10V 10GHZ SOT343Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE68018-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, housed in a SOT-343 package, offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. It exhibits a transition frequency of 10GHz and a typical gain of 10.2dB at 2GHz, with a noise figure of 1.8dB at the same frequency. The transistor is rated for a maximum power dissipation of 150mW and an operating junction temperature up to 150°C. Key parameters include a minimum DC current gain (hFE) of 50 at 10mA and 6V. This component is commonly employed in wireless communication systems and RF front-end circuitry. The NE68018-T1-A is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10.2dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SOT-343 |
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