NE678M04-T2-A
RF TRANS NPN 6V 12GHZ SOT343FManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE678M04-T2-A is a high-performance NPN RF transistor designed for demanding microwave applications. This SOT-343F packaged device offers a collector-emitter breakdown voltage of 6V and a maximum collector current of 100mA. With a transition frequency (fT) of 12GHz and a typical gain of 13.5dB at 2GHz, it is well-suited for RF amplification and switching circuits. The noise figure is a competitive 1.7dB at 2GHz, contributing to excellent signal integrity. This transistor operates efficiently with a maximum power dissipation of 205mW and supports a junction temperature up to 150°C. It is supplied in Tape & Reel packaging, facilitating automated assembly processes in industries such as telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13.5dB |
| Power - Max | 205mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 30mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.7dB @ 2GHz |
| Supplier Device Package | SOT-343F |
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