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NE678M04-A

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NE678M04-A

RF TRANS NPN 6V 12GHZ SOT343F

Manufacturer: CEL

Categories: Bipolar RF Transistors

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CEL NE678M04-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in a SOT-343F, features a collector-emitter breakdown voltage of 6V and a maximum collector current of 100mA. It offers a transition frequency of 12GHz and a typical gain of 13.5dB. The transistor exhibits a minimum DC current gain (hFE) of 75 at 30mA and 3V, with a noise figure of 1.7dB at 2GHz. Maximum power dissipation is rated at 205mW, and it operates at temperatures up to 150°C (TJ). This device is suitable for use in wireless infrastructure, satellite communications, and other demanding RF systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSOT-343F
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain13.5dB
Power - Max205mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)6V
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 30mA, 3V
Frequency - Transition12GHz
Noise Figure (dB Typ @ f)1.7dB @ 2GHz
Supplier Device PackageSOT-343F

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