Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

NE67818-T1-A

Banner
productimage

NE67818-T1-A

RF TRANS NPN 6V 12GHZ SOT343

Manufacturer: CEL

Categories: Bipolar RF Transistors

Quality Control: Learn More

CEL NE67818-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in a SOT-343 (SC-82A) case, operates with a collector-emitter breakdown voltage of 6V and a maximum collector current of 100mA. It features a transition frequency of 12GHz and a typical gain of 10dB. The device exhibits a minimum DC current gain (hFE) of 75 at 30mA and 3V, with a maximum power dissipation of 200mW. The noise figure is rated at a typical 1.7dB at 2GHz. Operating temperature range is up to 150°C (TJ). This component is commonly utilized in wireless communication systems, satellite communications, and radar applications. Supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain10dB
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)6V
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 30mA, 3V
Frequency - Transition12GHz
Noise Figure (dB Typ @ f)1.7dB @ 2GHz
Supplier Device PackageSOT-343

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
NE68133-A

RF TRANS NPN 10V 9GHZ SOT23

product image
NE68719-T1

RF TRANS NPN 3V 11GHZ 3SMINMOLD

product image
NE851M13-T3-A

TRANS NPN LOW PRO M13 SMD