NE67818-A
RF TRANS NPN 6V 12GHZ SOT343Manufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE67818-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in an SC-82A (SOT-343) package, features a collector-emitter breakdown voltage of 6V and a maximum collector current of 100mA. With a transition frequency of 12GHz and a typical gain of 13dB, it is suitable for demanding RF designs. The device exhibits a minimum DC current gain (hFE) of 75 at 30mA and 3V, and a typical noise figure of 1.7dB at 2GHz. Its maximum power dissipation is 200mW, and it operates across an extended temperature range up to 150°C (TJ). This transistor finds application in wireless communications infrastructure, satellite systems, and other advanced RF circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDownload Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 30mA, 3V |
| Frequency - Transition | 12GHz |
| Noise Figure (dB Typ @ f) | 1.7dB @ 2GHz |
| Supplier Device Package | - |
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