NE664M04-A
RF TRANS NPN 5V 20GHZ SOT343FManufacturer: CEL
Categories: Bipolar RF Transistors
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The CEL NE664M04-A is an NPN bipolar RF transistor optimized for high-frequency applications. Featuring a transition frequency of 20GHz, this device supports operation up to 5V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 40 at 100mA and 3V, with a typical gain of 12dB. The transistor is housed in a compact SOT-343F surface-mount package, delivering a maximum power dissipation of 735mW. Operating temperature range extends to 150°C (TJ). This component is frequently utilized in wireless communication systems, radar applications, and other demanding RF front-end designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 735mW |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 3V |
| Frequency - Transition | 20GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-343F |
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